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dc.contributor.authorKIM, TW-
dc.contributor.authorLEE, DU-
dc.contributor.authorYOON, YS-
dc.contributor.authorWANG, CH-
dc.contributor.authorYOM, SS-
dc.contributor.authorLEE, SJ-
dc.contributor.authorKIM, CO-
dc.date.accessioned2024-01-21T20:33:02Z-
dc.date.available2024-01-21T20:33:02Z-
dc.date.created2022-01-11-
dc.date.issued1995-10-
dc.identifier.issn0038-1098-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144953-
dc.description.abstractThe growth of ferroelectric PbTiO3 thin films on indium tin oxide (ITO)-coated glass by metalorganic chemical vapor deposition, using Pb(tmhd)(2), Ti(OC(3)h(7))(4), and N2O via thermal pyrolysis with several methods was performed to produce high quality PbTiO3 films. Scanning electron microscopy showed that the surface of the PbTiO3 films grown by continuous cooling process (CCP) had a smooth surface without any indications of defects and that the interface between the PbTiO3 film and ITO-coated glass was abrupt. Atomic force microscopy showed that the PbTiO3 film grown by the CCP had a smooth surface consisting of hemispherical grains, and optical transmittance measurements showed that the PbTiO3 grown by the CCP had approximately 80% of the transmittance in the visible wavelength range. The dielectric constant and dissipation factor of the PbTiO3 film grown by the CCP are the largest and smallest values among those grown by several methods, respectively. These results indicate that the PbTiO3 thin film grown on ITO-coated glass by CCP can be used for thin-film flat panel-electroluminescent display applications.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectFERROELECTRIC THIN-FILMS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectLOW-TEMPERATURE-
dc.titleSTRUCTURAL AND OPTICAL-PROPERTIES OF PBTIO3 FILMS GROWN ON INDIUM TIN OXIDE-COATED GLASS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING THE CONTINUOUS COOLING PROCESS-
dc.typeArticle-
dc.identifier.doi10.1016/0038-1098(95)00270-7-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSOLID STATE COMMUNICATIONS, v.96, no.2, pp.95 - 99-
dc.citation.titleSOLID STATE COMMUNICATIONS-
dc.citation.volume96-
dc.citation.number2-
dc.citation.startPage95-
dc.citation.endPage99-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1995RQ75300011-
dc.identifier.scopusid2-s2.0-0029394305-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusFERROELECTRIC THIN-FILMS-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusLOW-TEMPERATURE-
dc.subject.keywordAuthorFERROELECTRICS-
dc.subject.keywordAuthorCRYSTAL GROWTH-
dc.subject.keywordAuthorSCANNING AND TRANSMISSION ELECTRON MICROSCOPY-
dc.subject.keywordAuthorX-RAY SCATTERING-
dc.subject.keywordAuthorOPTICAL PROPERTIES-
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