DSpace at KIST: Growth of HgCdTe epi-layers using MOVPE and surface morphology improvement.

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DC Field	Value	Language
dc.contributor.author	서상희	-
dc.contributor.author	문성욱	-
dc.contributor.author	송종형	-
dc.contributor.author	박만장	-
dc.contributor.author	김봉진	-
dc.contributor.author	김긍호	-
dc.date.accessioned	2024-01-21T20:35:36Z	-
dc.date.available	2024-01-21T20:35:36Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1995-09	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144997	-
dc.title	Growth of HgCdTe epi-layers using MOVPE and surface morphology improvement.	-
dc.title.alternative	MOVPE 방법에 의한 대면적 HgCdTe 성장 및 표면형상 개선 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	한국물리학회지 응용물리 (Ungyong Mulli (The Korean Physical Society)), v.v. 8, pp.25 - 30	-
dc.citation.title	한국물리학회지 응용물리 (Ungyong Mulli (The Korean Physical Society))	-
dc.citation.volume	v. 8	-
dc.citation.startPage	25	-
dc.citation.endPage	30	-
dc.subject.keywordAuthor	MOVPE	-

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