PULSED-LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED PT/SRBI2TA2O9/PT FERROELECTRIC CAPACITORS WITH PRACTICALLY NO POLARIZATION FATIGUE

Abstract

Pulsed laser ablation deposition was used to synthesize polycrystalline SrBi2Ta2O9 layered ferroelectric thin films on platinized silicon substrates. Top electrodes were produced by de magnetron sputter deposition to fabricate capacitors for electrical tests. The polarization electric field hysteresis loops showed saturation in the 2-4 V range with a coercive field of 25 kV/cm. The capacitors showed practically no polarization fatigue up to 10(11) switching cycles. The resistivity of the SrBi2Ta2O9 for a coercive field of 100 kV/cm was approximately 2X10(11) Omega cm. Retention and imprint characteristics of these capacitors showed no degradation as a function of cumulative waiting times. (C) 1995 American Institute of Physics.