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dc.contributor.authorLEE, YH-
dc.contributor.authorKIM, DH-
dc.contributor.authorJU, BK-
dc.contributor.authorYEOM, TH-
dc.contributor.authorHAHN, TS-
dc.contributor.authorOH, MH-
dc.contributor.authorCHOH, SH-
dc.date.accessioned2024-01-21T20:46:28Z-
dc.date.available2024-01-21T20:46:28Z-
dc.date.created2022-01-11-
dc.date.issued1995-02-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145178-
dc.description.abstractSingle-layer SrS:Ce and multilayer SrS-SrS:Ce-SrS thin films have been grown by multi-source deposition method. The X-ray diffraction patterns of the films showed the typical diffraction patterns of the cubic SrS powder. Single-layer SrS:Ce thin films exhibited sulfur deficiency and their fluorescence spectra showed a broad red emission peak. The multilayer SrS-SrS:Ce-SrS electroluminescent device showed nearly stoichiometric composition and an electroluminescent device made of these layers displayed a green-emission intensified spectrum with peaks located at 493 and 523 nm. A distinct S-shaped pinching effect in the transferred charge versus applied voltage characteristics, similar to a hysteretic electroluminescent device, was observed in multilayer device. We interpret that the separation of the light-emitting SrS:Ce layer from the two interfacial SrS layers and the resulting nonuniform space charge in the middle SrS:Ce layer are responsible for the observed enhancement of luminance through the intensified hysteretic effect in the multilayer structure.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectHYSTERETIC BEHAVIOR-
dc.subjectSIMPLE-MODEL-
dc.titleEFFECT OF MULTILAYERED SRS-SRS-CE-SRS PHOSPHOR PREPARED BY MULTISOURCE DEPOSITION METHOD ON THE THIN-FILM ELECTROLUMINESCENT DEVICES-
dc.typeArticle-
dc.identifier.doi10.1016/0022-0248(94)00662-8-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF CRYSTAL GROWTH, v.147, no.3-4, pp.326 - 332-
dc.citation.titleJOURNAL OF CRYSTAL GROWTH-
dc.citation.volume147-
dc.citation.number3-4-
dc.citation.startPage326-
dc.citation.endPage332-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1995QG48900012-
dc.identifier.scopusid2-s2.0-0029251550-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaCrystallography-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusHYSTERETIC BEHAVIOR-
dc.subject.keywordPlusSIMPLE-MODEL-
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