Full metadata record
DC Field | Value | Language |
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dc.contributor.author | LEE, YH | - |
dc.contributor.author | KIM, DH | - |
dc.contributor.author | JU, BK | - |
dc.contributor.author | YEOM, TH | - |
dc.contributor.author | HAHN, TS | - |
dc.contributor.author | OH, MH | - |
dc.contributor.author | CHOH, SH | - |
dc.date.accessioned | 2024-01-21T20:46:28Z | - |
dc.date.available | 2024-01-21T20:46:28Z | - |
dc.date.created | 2022-01-11 | - |
dc.date.issued | 1995-02 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/145178 | - |
dc.description.abstract | Single-layer SrS:Ce and multilayer SrS-SrS:Ce-SrS thin films have been grown by multi-source deposition method. The X-ray diffraction patterns of the films showed the typical diffraction patterns of the cubic SrS powder. Single-layer SrS:Ce thin films exhibited sulfur deficiency and their fluorescence spectra showed a broad red emission peak. The multilayer SrS-SrS:Ce-SrS electroluminescent device showed nearly stoichiometric composition and an electroluminescent device made of these layers displayed a green-emission intensified spectrum with peaks located at 493 and 523 nm. A distinct S-shaped pinching effect in the transferred charge versus applied voltage characteristics, similar to a hysteretic electroluminescent device, was observed in multilayer device. We interpret that the separation of the light-emitting SrS:Ce layer from the two interfacial SrS layers and the resulting nonuniform space charge in the middle SrS:Ce layer are responsible for the observed enhancement of luminance through the intensified hysteretic effect in the multilayer structure. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | HYSTERETIC BEHAVIOR | - |
dc.subject | SIMPLE-MODEL | - |
dc.title | EFFECT OF MULTILAYERED SRS-SRS-CE-SRS PHOSPHOR PREPARED BY MULTISOURCE DEPOSITION METHOD ON THE THIN-FILM ELECTROLUMINESCENT DEVICES | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/0022-0248(94)00662-8 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.147, no.3-4, pp.326 - 332 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 147 | - |
dc.citation.number | 3-4 | - |
dc.citation.startPage | 326 | - |
dc.citation.endPage | 332 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | A1995QG48900012 | - |
dc.identifier.scopusid | 2-s2.0-0029251550 | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HYSTERETIC BEHAVIOR | - |
dc.subject.keywordPlus | SIMPLE-MODEL | - |
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