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dc.contributor.author이석-
dc.contributor.authorW. J. Choi-
dc.contributor.authorJ. Zhang-
dc.contributor.author김용-
dc.contributor.authorS. K. Kim-
dc.contributor.author이정일-
dc.contributor.author강광남-
dc.contributor.authorK. Cho-
dc.date.accessioned2024-01-21T21:02:36Z-
dc.date.available2024-01-21T21:02:36Z-
dc.date.created2022-01-10-
dc.date.issued1995-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145221-
dc.titlePlasma effect in dielectric cap quantum well disordering using plasma enhanced chemical vapor deposited SiN capping layer.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJapanese journal of applied physics, v.v. 34, pp.L418 - ?-
dc.citation.titleJapanese journal of applied physics-
dc.citation.volumev. 34-
dc.citation.startPageL418-
dc.citation.endPage?-
dc.subject.keywordAuthorquantum well disordering-
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