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dc.contributor.author강광남-
dc.contributor.author우덕하-
dc.contributor.author한일기-
dc.contributor.author최원준-
dc.contributor.author김회종-
dc.contributor.author김선호-
dc.contributor.author이정일-
dc.date.accessioned2024-01-21T21:04:19Z-
dc.date.available2024-01-21T21:04:19Z-
dc.date.created2022-01-10-
dc.date.issued1995-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145250-
dc.title화학선속 증착법 (Chemical Beam Epitaxy) 으로 성장한 InGaAsP 시료의 광루미네슨스 특성 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationBull. Korean phys. soc., v.v. 13, no.no. 2, pp.499 - ?-
dc.citation.titleBull. Korean phys. soc.-
dc.citation.volumev. 13-
dc.citation.numberno. 2-
dc.citation.startPage499-
dc.citation.endPage?-
dc.subject.keywordAuthorInGaAsP-
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