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dc.contributor.author강광남-
dc.contributor.author이정일-
dc.contributor.author한일기-
dc.contributor.author이윤희-
dc.contributor.author김회종-
dc.contributor.author이석-
dc.contributor.author오명환-
dc.contributor.author김선호-
dc.contributor.author박홍이-
dc.date.accessioned2024-01-21T21:07:37Z-
dc.date.available2024-01-21T21:07:37Z-
dc.date.created2022-01-10-
dc.date.issued1995-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145306-
dc.titleSelective etching characteristics of ITO/semiconductor and ITO/BaTiO//3 structures by reactive ion etching.-
dc.title.alternativeReactive ion etching 에 의한 ITO/ 반도체 및 ITO/BaTiO//3 구조의 선택적 에칭 특성 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전자공학회논문집 A, v.v. 32, no.no. 1, pp.152 - ?-
dc.citation.title전자공학회논문집 A-
dc.citation.volumev. 32-
dc.citation.numberno. 1-
dc.citation.startPage152-
dc.citation.endPage?-
dc.subject.keywordAuthorreactive ion etching-
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