New resists based on N-protected polymaleimides having hydroxystyrene units

Abstract

N-Protected polymaleimides having hydroxystyrene (HOSt) units have been designed and investigated as new resist materials. Radical copolymerizations of N-protected maleimides (RfMI) and HOSt readily afforded the polymaleimides in high yields in an alternating chain structure. The polymers having HOSt units were found to have promising properties such as low optical absorption in deep UV region and good thermal stability, in particular, adhesion to silicon substrates during development with aqueous alkaline solutions. Two-component resist systems consisting of the polymers and a photoacid generator rendered positive-tone images through a chemically amplified process. ？ 1995, The Society of Photopolymer Science and Technology(SPST). All rights reserved.