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dc.contributor.authorKIM, CH-
dc.contributor.authorHAN, IK-
dc.contributor.authorLEE, JI-
dc.contributor.authorKANG, KN-
dc.contributor.authorKWON, SD-
dc.contributor.authorCHOE, B-
dc.contributor.authorPARK, HL-
dc.contributor.authorHER, J-
dc.contributor.authorLIM, H-
dc.date.accessioned2024-01-21T21:38:37Z-
dc.date.available2024-01-21T21:38:37Z-
dc.date.created2022-01-10-
dc.date.issued1994-04-15-
dc.identifier.issn0261-8028-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145599-
dc.languageEnglish-
dc.publisherCHAPMAN HALL LTD-
dc.subjectRICH SILICON-NITRIDE-
dc.subjectINSTABILITIES-
dc.subjectSTATES-
dc.subjectFILMS-
dc.titleEFFECT OF ULTRAVIOLET ILLUMINATION ON THE CHARGE TRAPPING BEHAVIOR IN SINX/INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PROVIDED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION-
dc.typeArticle-
dc.identifier.doi10.1007/BF00592609-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE LETTERS, v.13, no.8, pp.563 - 565-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE LETTERS-
dc.citation.volume13-
dc.citation.number8-
dc.citation.startPage563-
dc.citation.endPage565-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1994NJ06700007-
dc.identifier.scopusid2-s2.0-0028413977-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusRICH SILICON-NITRIDE-
dc.subject.keywordPlusINSTABILITIES-
dc.subject.keywordPlusSTATES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorSiNx/InP MIS structure-
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