Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, YH | - |
dc.contributor.author | JU, BK | - |
dc.contributor.author | YEOM, TH | - |
dc.contributor.author | KIM, DH | - |
dc.contributor.author | HAHN, TS | - |
dc.contributor.author | CHOH, SH | - |
dc.contributor.author | OH, MH | - |
dc.date.accessioned | 2024-01-21T21:40:31Z | - |
dc.date.available | 2024-01-21T21:40:31Z | - |
dc.date.created | 2021-09-01 | - |
dc.date.issued | 1994-02-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/145629 | - |
dc.description.abstract | The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610-670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | LUMINESCENCE AND ELECTRON-PARAMAGNETIC-RESONANCE STUDIES OF WHITE-LIGHT EMITTING SRS-PR,F THIN-FILM ELECTROLUMINESCENT DEVICES | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.356366 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.75, no.3, pp.1754 - 1757 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 75 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1754 | - |
dc.citation.endPage | 1757 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | A1994MW52200073 | - |
dc.identifier.scopusid | 2-s2.0-0028382783 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | TFELD | - |
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