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dc.contributor.author이창우-
dc.contributor.author김용태-
dc.contributor.author이주천-
dc.contributor.authorJeong Yong Lee-
dc.contributor.author민석기-
dc.contributor.author박영욱-
dc.date.accessioned2024-01-21T22:02:03Z-
dc.date.available2024-01-21T22:02:03Z-
dc.date.created2022-01-10-
dc.date.issued1994-01-
dc.identifier.issn1071-1023-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145763-
dc.languageEnglish-
dc.publisherAmerican Institute of Physics-
dc.titlePerformance of the plasma deposited tungsten nitride barrier to prevent the interdiffusion of Al and Si.-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.12, pp.69 - 72-
dc.citation.titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures-
dc.citation.volume12-
dc.citation.startPage69-
dc.citation.endPage72-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassother-
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