DSpace at KIST: Impurity free quantum well disordering by rapid thermal annealing (RTA) using plasma enhanced chemical vapor deposited (PECVD) SiN//x capping layer.

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DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	최원준	-
dc.contributor.author	이석	-
dc.contributor.author	김용	-
dc.contributor.author	김상국	-
dc.contributor.author	김회종	-
dc.contributor.author	우덕하	-
dc.contributor.author	조규만	-
dc.date.accessioned	2024-01-21T22:04:06Z	-
dc.date.available	2024-01-21T22:04:06Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1994-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/145797	-
dc.title	Impurity free quantum well disordering by rapid thermal annealing (RTA) using plasma enhanced chemical vapor deposited (PECVD) SiN//x capping layer.	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	Bull. Korean phys. soc., v.v. 12, no.no. 1, pp.128 - ?	-
dc.citation.title	Bull. Korean phys. soc.	-
dc.citation.volume	v. 12	-
dc.citation.number	no. 1	-
dc.citation.startPage	128	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	quantum well disordering	-

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