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dc.contributor.author김긍호-
dc.contributor.authorJ. L. Gray-
dc.contributor.authorH. M. Yoo-
dc.contributor.authorF. S. Ohuchi-
dc.date.accessioned2024-01-21T22:06:23Z-
dc.date.available2024-01-21T22:06:23Z-
dc.date.created2022-01-10-
dc.date.issued1994-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145835-
dc.titleLow-temperature growth and characterization of GaAs epitaxial layer on (111) B GaAs substrates.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJournal of vacuum science and technology B, v.v. 12, no.no. 2, pp.1059 - 1062-
dc.citation.titleJournal of vacuum science and technology B-
dc.citation.volumev. 12-
dc.citation.numberno. 2-
dc.citation.startPage1059-
dc.citation.endPage1062-
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