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dc.contributor.author김용-
dc.contributor.author손창식-
dc.contributor.author김성일-
dc.contributor.author이민석-
dc.contributor.author김무성-
dc.contributor.author최인훈-
dc.contributor.author민석기-
dc.date.accessioned2024-01-21T22:08:54Z-
dc.date.available2024-01-21T22:08:54Z-
dc.date.created2022-01-10-
dc.date.issued1994-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145877-
dc.titleCCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리, v.7, no.4, pp.278 - 283-
dc.citation.title응용물리-
dc.citation.volume7-
dc.citation.number4-
dc.citation.startPage278-
dc.citation.endPage283-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorcarbon doping-
dc.subject.keywordAuthorCCl4-
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