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dc.contributor.author김성일-
dc.contributor.author김무성-
dc.contributor.author민석기-
dc.date.accessioned2024-01-21T22:40:22Z-
dc.date.available2024-01-21T22:40:22Z-
dc.date.created2022-01-10-
dc.date.issued1993-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146173-
dc.titleLPMOCVD 방법에 의한 탄소도핑된 갈륨비소 에피층의 격자 수축 및 임계두께 해석 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationKorean appl. phys., v.v. 6, no.no. 5, pp.365 - 369-
dc.citation.titleKorean appl. phys.-
dc.citation.volumev. 6-
dc.citation.numberno. 5-
dc.citation.startPage365-
dc.citation.endPage369-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthorAlGaAs-
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