DSpace at KIST: Improvement of electrical properties of LPE-Hg0.8Cd0.2Te using Cd0.94Zn0.06Te buffer layer.

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DC Field	Value	Language
dc.contributor.author	서상희	-
dc.contributor.author	곽노정	-
dc.contributor.author	최인훈	-
dc.date.accessioned	2024-01-21T22:42:34Z	-
dc.date.available	2024-01-21T22:42:34Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1993-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/146210	-
dc.title	Improvement of electrical properties of LPE-Hg0.8Cd0.2Te using Cd0.94Zn0.06Te buffer layer.	-
dc.title.alternative	Cd0.94Zn0.06Te 완충층을 이용한 LPE-Hg0.8Cd0.2Te 의 전기적 성질 개선 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	응용물리, v.v. 6, no.no. 5, pp.432 - 438	-
dc.citation.title	응용물리	-
dc.citation.volume	v. 6	-
dc.citation.number	no. 5	-
dc.citation.startPage	432	-
dc.citation.endPage	438	-
dc.subject.keywordAuthor	LPE	-
dc.subject.keywordAuthor	CdZnTe	-
dc.subject.keywordAuthor	HgCdTe	-
dc.subject.keywordAuthor	전기적 성질	-

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