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dc.contributor.author김성일-
dc.contributor.author민석기-
dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author이민석-
dc.contributor.author김영덕-
dc.date.accessioned2024-01-21T22:44:03Z-
dc.date.available2024-01-21T22:44:03Z-
dc.date.created2022-01-10-
dc.date.issued1993-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146235-
dc.titleFabrication of single GaAs substrate by MOCVD.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationBull. Korean phys. soc., v.v. 11, no.no. 2, pp.? - ?-
dc.citation.titleBull. Korean phys. soc.-
dc.citation.volumev. 11-
dc.citation.numberno. 2-
dc.citation.startPage?-
dc.citation.endPage?-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthorAlGaAs-
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