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dc.contributor.author김용-
dc.contributor.author김성일-
dc.contributor.author김무성-
dc.contributor.author민석기-
dc.contributor.author이민석-
dc.contributor.author김영덕-
dc.date.accessioned2024-01-21T22:47:08Z-
dc.date.available2024-01-21T22:47:08Z-
dc.date.created2022-01-10-
dc.date.issued1993-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146287-
dc.titleStudy on the lateral island extension for growth-intersupted GaAs/Al0.3Ga0.7As single quantum wells grown by atmospheric-pressure metalorganic chemical vapor deposition-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJournal of Korean applied physics, v.v. 26, no.no. 6, pp.705 - 709-
dc.citation.titleJournal of Korean applied physics-
dc.citation.volumev. 26-
dc.citation.numberno. 6-
dc.citation.startPage705-
dc.citation.endPage709-
dc.subject.keywordAuthorlateral island extension-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs/AlGaAs-
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