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dc.contributor.author김성일-
dc.contributor.author민석기-
dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author엄경숙-
dc.contributor.authorC. J. Kim-
dc.contributor.authorH. S. Oh-
dc.date.accessioned2024-01-21T23:13:32Z-
dc.date.available2024-01-21T23:13:32Z-
dc.date.created2022-01-10-
dc.date.issued1992-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146503-
dc.titleFabrication of single quantum well separate confinement heterostructure laser diode grown by MOCVD.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationBull. Korean phys. soc., v.v. 10, no.no. 1, pp.109 - ?-
dc.citation.titleBull. Korean phys. soc.-
dc.citation.volumev. 10-
dc.citation.numberno. 1-
dc.citation.startPage109-
dc.citation.endPage?-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthorAlGaAs-
dc.subject.keywordAuthorquantum well laser-
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