DSpace at KIST: Growth of Al//2O//3 epitaxial films on p-Si substrates by low-pressure metalorganic chemical vapor deposition.

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DC Field	Value	Language
dc.contributor.author	염상섭	-
dc.contributor.author	윤영수	-
dc.contributor.author	T. W. Kim	-
dc.contributor.author	W. N. Kang	-
dc.contributor.author	P. H. Hur	-
dc.contributor.author	C. Y. Kim	-
dc.date.accessioned	2024-01-21T23:16:33Z	-
dc.date.available	2024-01-21T23:16:33Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1992-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/146553	-
dc.title	Growth of Al//2O//3 epitaxial films on p-Si substrates by low-pressure metalorganic chemical vapor deposition.	-
dc.title.alternative	저압하에서 metalorganic chemical vapor deposition 에 의한 p-Si 기판위에 Al//2O//3 결정성을 가진 박막성장 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	응용물리 = Korean appl. phys., v.v. 5, pp.169 - 173	-
dc.citation.title	응용물리 = Korean appl. phys.	-
dc.citation.volume	v. 5	-
dc.citation.startPage	169	-
dc.citation.endPage	173	-
dc.subject.keywordAuthor	thin films	-
dc.subject.keywordAuthor	Al//2O//3	-
dc.subject.keywordAuthor	MOCVD	-

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