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dc.contributor.author서상희-
dc.contributor.author송원준-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-21T23:16:55Z-
dc.date.available2024-01-21T23:16:55Z-
dc.date.created2022-01-10-
dc.date.issued1992-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146559-
dc.titleEffect of the DeTe/DmCd mole ratio on the surface morphology of MOVPE grown CdTe/GaAs epi layer.-
dc.title.alternativeMOVPE 법으로 성장된 CdTe/GaAs 박막 결정의 표면형상에 미치는 DeTe/DmCd 몰 비율의 영향 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리, v.v. 5, no.no. 1, pp.53 - 60-
dc.citation.title응용물리-
dc.citation.volumev. 5-
dc.citation.numberno. 1-
dc.citation.startPage53-
dc.citation.endPage60-
dc.subject.keywordAuthorMOVPE-
dc.subject.keywordAuthorCdTe/GaAs-
dc.subject.keywordAuthor표면형상-
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