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dc.contributor.author염상섭-
dc.contributor.author윤영수-
dc.contributor.authorW. N. Kang-
dc.contributor.authorJ. I. Lee-
dc.contributor.authorD. J. Choi-
dc.contributor.authorT. W. Kim-
dc.contributor.authorK. Y. Seo-
dc.contributor.authorP. H. Hur-
dc.contributor.authorC. Y. Kim-
dc.date.accessioned2024-01-21T23:34:30Z-
dc.date.available2024-01-21T23:34:30Z-
dc.date.created2022-01-10-
dc.date.issued1992-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146632-
dc.titleGrowth of g-Al2O3 thin films on Si by low-pressure metalorganic chemical vapor deposition-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationThin solid films, v.213, pp.72 - 75-
dc.citation.titleThin solid films-
dc.citation.volume213-
dc.citation.startPage72-
dc.citation.endPage75-
dc.subject.keywordAuthorthin films-
dc.subject.keywordAuthorAl2O3-
dc.subject.keywordAuthorMOCVD-
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