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dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author민석기-
dc.contributor.author이호섭-
dc.contributor.author강태원-
dc.contributor.author홍치유-
dc.date.accessioned2024-01-21T23:42:46Z-
dc.date.available2024-01-21T23:42:46Z-
dc.date.created2022-01-10-
dc.date.issued1991-08-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146767-
dc.titleSi 과 Be 이온이 공동주입된 GaAs 에 대한 전기 및 광학적 특성연구 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리, v.v. 4, no.no. 3, pp.357 - 362-
dc.citation.title응용물리-
dc.citation.volumev. 4-
dc.citation.numberno. 3-
dc.citation.startPage357-
dc.citation.endPage362-
dc.subject.keywordAuthorSi and Be ions-
dc.subject.keywordAuthorco-implantation-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthorcharacterization-
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