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dc.contributor.author박용주-
dc.contributor.author박승철-
dc.contributor.author한철원-
dc.contributor.author민석기-
dc.contributor.author심광보-
dc.date.accessioned2024-01-21T23:44:47Z-
dc.date.available2024-01-21T23:44:47Z-
dc.date.created2022-01-10-
dc.date.issued1991-05-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146800-
dc.titleGaAs single crystal growth by the VGF technique.-
dc.title.alternativeVGF 법에 의한 GaAs 단결정성장 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationKorean applied physics, v.v. 4, no.no. 2, pp.194 - 199-
dc.citation.titleKorean applied physics-
dc.citation.volumev. 4-
dc.citation.numberno. 2-
dc.citation.startPage194-
dc.citation.endPage199-
dc.subject.keywordAuthorVGF 결정성장장치-
dc.subject.keywordAuthorDMF 전기로-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthor원형 wafer-
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