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dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author김춘근-
dc.contributor.author민석기-
dc.contributor.author김현수-
dc.contributor.author심기대-
dc.contributor.author박만장-
dc.date.accessioned2024-01-21T23:45:49Z-
dc.date.available2024-01-21T23:45:49Z-
dc.date.created2022-01-10-
dc.date.issued1991-04-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146817-
dc.titleRTA 에 의한 Si 내의 thermal donors 와 깊은 준위의 거동 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리, v.v. 31, no.no. 2, pp.172 - 176-
dc.citation.title새물리-
dc.citation.volumev. 31-
dc.citation.numberno. 2-
dc.citation.startPage172-
dc.citation.endPage176-
dc.subject.keywordAuthorRTA-
dc.subject.keywordAuthorSi-
dc.subject.keywordAuthorthermal donor-
dc.subject.keywordAuthordeep level-
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