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dc.contributor.author강광남-
dc.contributor.author이정일-
dc.contributor.author이명복-
dc.contributor.author윤경식-
dc.date.accessioned2024-01-22T00:02:44Z-
dc.date.available2024-01-22T00:02:44Z-
dc.date.created2022-01-10-
dc.date.issued1991-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146876-
dc.titleA study on the parasitic resistance of a short channel MOSFETs with lightly doped drain structure.-
dc.title.alternativeLightly doped drain 구조를 갖는 짧은 채널 MOSFETs 에서 parasitic resistance 의 연구 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전자공학회논문지, v.v. 28A, no.no. 2, pp.142 - ?-
dc.citation.title전자공학회논문지-
dc.citation.volumev. 28A-
dc.citation.numberno. 2-
dc.citation.startPage142-
dc.citation.endPage?-
dc.subject.keywordAuthorMOSFET-
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