DSpace at KIST: Behavior of C-V hysteresis in MOCVD-grown Al2O3/p-InP MIS diodes.

Full metadata record

DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	이정일	-
dc.contributor.author	C. H. Kim	-
dc.contributor.author	T. W. Kim	-
dc.contributor.author	H. Lim	-
dc.contributor.author	최병두	-
dc.date.accessioned	2024-01-22T00:04:52Z	-
dc.date.available	2024-01-22T00:04:52Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1991-01	-
dc.identifier.issn	0374-4884	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/146911	-
dc.publisher	Korean Physical Society	-
dc.title	Behavior of C-V hysteresis in MOCVD-grown Al2O3/p-InP MIS diodes.	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Journal of the Korean Physical Society, v.24, no.6, pp.478 - ?	-
dc.citation.title	Journal of the Korean Physical Society	-
dc.citation.volume	24	-
dc.citation.number	6	-
dc.citation.startPage	478	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	InP MIS diodes	-

Show Simple Item Record

KIST Library Institutional Repository