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dc.contributor.author강광남-
dc.contributor.author이정일-
dc.contributor.authorT. W. Kim-
dc.contributor.authorK. S. Lee-
dc.contributor.authorK. H. Yoo-
dc.date.accessioned2024-01-22T00:08:11Z-
dc.date.available2024-01-22T00:08:11Z-
dc.date.created2022-01-10-
dc.date.issued1991-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146966-
dc.titleElectrical subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationPhysical review B, v.v. 44, no.no. 23, pp.12891 - ?-
dc.citation.titlePhysical review B-
dc.citation.volumev. 44-
dc.citation.numberno. 23-
dc.citation.startPage12891-
dc.citation.endPage?-
dc.subject.keywordAuthorelectrical subbands-
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