A study on the active layer dissolution of InP/InGaAsP/InP DH structure for 1.55㎛ long-wavelength grown by liquid phase epitaxy

Other Titles
LPE 법으로 성장시킨 1.55 ㎛ 장파장용 InP/InGaAsP/InP DH 구조의 활성층 용해에 관한 연구
Authors
서상희김을락곽노정최인훈
Issue Date
1991-01
Citation
응용물리, v.4, no.4, pp.474 - 482
Keywords
LPE; InP/InGaAsP/InP; 활성층용해
URI
https://pubs.kist.re.kr/handle/201004/146972
Appears in Collections:
KIST Article > Others
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