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dc.contributor.author강광남-
dc.contributor.author이정일-
dc.contributor.author이명복-
dc.contributor.author윤경식-
dc.contributor.author임기영-
dc.date.accessioned2024-01-22T00:09:34Z-
dc.date.available2024-01-22T00:09:34Z-
dc.date.created2022-01-10-
dc.date.issued1991-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146989-
dc.titleEffects of velocity saturation in the LDD region on the characteristics of short channel LDD MOSFETs.-
dc.title.alternative짧은 채널 LDD MOSFET 에서 LDD 영역의 포화속도가 소자특성에 미치는 영향 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전자통신지, v.v. 12, pp.? - ?-
dc.citation.title전자통신지-
dc.citation.volumev. 12-
dc.citation.startPage?-
dc.citation.endPage?-
dc.subject.keywordAuthorMOSFET-
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