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dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author홍치유-
dc.contributor.author민석기-
dc.contributor.author이호섭-
dc.contributor.author강태원-
dc.date.accessioned2024-01-22T00:11:22Z-
dc.date.available2024-01-22T00:11:22Z-
dc.date.created2022-01-10-
dc.date.issued1990-12-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147019-
dc.titlePhotoinduced current transient spectroscopy (PICTS).-
dc.title.alternative반절연성 GaAs 에 대한 깊은 준위들의 열적거동 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리, v.v. 30, no.no. 6, pp.757 - 761-
dc.citation.title새물리-
dc.citation.volumev. 30-
dc.citation.numberno. 6-
dc.citation.startPage757-
dc.citation.endPage761-
dc.subject.keywordAuthorsemi-insulating GaAs-
dc.subject.keywordAuthordeep level-
dc.subject.keywordAuthorthermal behavior-
dc.subject.keywordAuthorphotoinduced-current-transient-spectroscopy(PICTS)-
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