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dc.contributor.authorCHO, HY-
dc.contributor.authorKIM, EK-
dc.contributor.authorMIN, SK-
dc.contributor.authorCHANG, KJ-
dc.contributor.authorLEE, CC-
dc.date.accessioned2024-01-22T00:12:24Z-
dc.date.available2024-01-22T00:12:24Z-
dc.date.created2021-09-05-
dc.date.issued1990-11-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147036-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleELECTRIC-FIELD-ENHANCED DISSOCIATION OF THE HYDROGEN-SI DONOR COMPLEX IN GAAS-
dc.typeArticle-
dc.identifier.doi10.1063/1.347070-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.68, no.10, pp.5077 - 5080-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume68-
dc.citation.number10-
dc.citation.startPage5077-
dc.citation.endPage5080-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1990EK04300022-
dc.identifier.scopusid2-s2.0-0042534565-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorhydrogen-Si donor complex-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthordissociation-
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