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dc.contributor.author정덕수-
dc.contributor.authorWilliam A. Sanders-
dc.date.accessioned2024-01-22T00:14:32Z-
dc.date.available2024-01-22T00:14:32Z-
dc.date.created2022-01-10-
dc.date.issued1990-08-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147070-
dc.titleHigh-temperature deformation and microstructural analysis for Si//3N//4-Sc//2O//3.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationNASA technical memorandum, v.no. 103239, pp.1 - 23-
dc.citation.titleNASA technical memorandum-
dc.citation.volumeno. 103239-
dc.citation.startPage1-
dc.citation.endPage23-
dc.subject.keywordAuthorSi//3N//4-Sc//2O//3-
dc.subject.keywordAuthorplastic deformation-
dc.subject.keywordAuthormicrostructure-
dc.subject.keywordAuthorsecondary phases-
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