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dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author엄경숙-
dc.contributor.author김성일-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T00:32:14Z-
dc.date.available2024-01-22T00:32:14Z-
dc.date.created2022-01-10-
dc.date.issued1990-02-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147144-
dc.titleMOCVD 에 의한 GaAs/AlGaAs 초격자 및 HEMT 구조의 성장 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전자공학회지, v.v. 27, no.no. 2, pp.81 - 92-
dc.citation.title전자공학회지-
dc.citation.volumev. 27-
dc.citation.numberno. 2-
dc.citation.startPage81-
dc.citation.endPage92-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs/AlGaAs-
dc.subject.keywordAuthorsuperlattice-
dc.subject.keywordAuthorHEMT-
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