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dc.contributor.author강광남-
dc.contributor.author이명복-
dc.contributor.author이정일-
dc.date.accessioned2024-01-22T00:39:31Z-
dc.date.available2024-01-22T00:39:31Z-
dc.date.created2022-01-10-
dc.date.issued1990-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147262-
dc.titleReduction of transconductance in saturation region of short channel LDD NMOSFETs.-
dc.title.alternative짧은 채널 LDD NMOSFET 의 포화영역 Transconductance 감소 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전자공학회논문지, v.27, no.1, pp.74 - 80-
dc.citation.title전자공학회논문지-
dc.citation.volume27-
dc.citation.number1-
dc.citation.startPage74-
dc.citation.endPage80-
dc.subject.keywordAuthorMOSFET-
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