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dc.contributor.author김용-
dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author윤주훈-
dc.contributor.author조성호-
dc.contributor.author김무성-
dc.contributor.author김현수-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T00:42:14Z-
dc.date.available2024-01-22T00:42:14Z-
dc.date.created2022-01-10-
dc.date.issued1989-10-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147306-
dc.titleMOCVD 방법으로 성장시킨 GaAs/Si 의 깊은 준위에 관한 연구 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리, v.v. 29, pp.585 - 590-
dc.citation.title새물리-
dc.citation.volumev. 29-
dc.citation.startPage585-
dc.citation.endPage590-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorDLTS-
dc.subject.keywordAuthorGaAs-on-Si-
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