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dc.contributor.authorLEE, JI-
dc.contributor.authorLEE, MB-
dc.contributor.authorKANG, KN-
dc.contributor.authorPARK, KO-
dc.date.accessioned2024-01-22T00:44:46Z-
dc.date.available2024-01-22T00:44:46Z-
dc.date.created2021-09-05-
dc.date.issued1989-05-25-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147348-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.titleMOBILITY REDUCTION PARAMETERS IN SHORT-CHANNEL MOSFETS-
dc.typeArticle-
dc.identifier.doi10.1049/el:19890509-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.25, no.11, pp.753 - 754-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume25-
dc.citation.number11-
dc.citation.startPage753-
dc.citation.endPage754-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1989AA39800047-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordAuthorMOSFET-
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