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dc.contributor.author박용주-
dc.contributor.author박승철-
dc.contributor.author한철원-
dc.contributor.author민석기-
dc.contributor.author심광보-
dc.date.accessioned2024-01-22T00:45:01Z-
dc.date.available2024-01-22T00:45:01Z-
dc.date.created2022-01-10-
dc.date.issued1989-05-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147352-
dc.titleGaAs single crystal growth by the monitoring(DM) crystal grower.-
dc.title.alternativeDirect monitoring(DM) 결정성장장치에 의한 GaAs 단결정 성장 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationKorean applied physics, v.v. 2, no.no. 2, pp.136 - 141-
dc.citation.titleKorean applied physics-
dc.citation.volumev. 2-
dc.citation.numberno. 2-
dc.citation.startPage136-
dc.citation.endPage141-
dc.subject.keywordAuthordirect monitorin-
dc.subject.keywordAuthorDM 전기로-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthorin-doping-
dc.subject.keywordAuthorhorizontal bridgman-
dc.subject.keywordAuthorHB-
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