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dc.contributor.author박용주-
dc.contributor.author민석기-
dc.contributor.author김은규-
dc.contributor.author김용-
dc.contributor.author한철원-
dc.contributor.author심광보-
dc.contributor.author박승철-
dc.date.accessioned2024-01-22T00:45:27Z-
dc.date.available2024-01-22T00:45:27Z-
dc.date.created2022-01-10-
dc.date.issued1989-04-
dc.identifier.issn0374-4914-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147359-
dc.publisher한국물리학회-
dc.titleGrowth and characterization of low-dislotation GaAs single crystal by the DM furnace-
dc.title.alternativeDM 전기로를 사용한 저결함 GaAs 단결성 성장과 특성평가-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation새물리, v.29, no.2, pp.160 - 166-
dc.citation.title새물리-
dc.citation.volume29-
dc.citation.number2-
dc.citation.startPage160-
dc.citation.endPage166-
dc.subject.keywordAuthorDM 전기로-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthorimpurity hardening-
dc.subject.keywordAuthor전위-
dc.subject.keywordAuthorGaAs bulk growth-
dc.subject.keywordAuthordirect monitoring furnace-
dc.subject.keywordAuthordislotation density-
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