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dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author박일우-
dc.contributor.author민석기-
dc.contributor.author심광보-
dc.contributor.author한철원-
dc.contributor.author조성호-
dc.date.accessioned2024-01-22T00:46:32Z-
dc.date.available2024-01-22T00:46:32Z-
dc.date.created2022-01-10-
dc.date.issued1989-02-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147377-
dc.title무전위 GaAs:In 의 급속열처리에 따른 깊은 준위 전자덫 연구 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리, v.v. 29, no.no. 1, pp.50 - 54-
dc.citation.title새물리-
dc.citation.volumev. 29-
dc.citation.numberno. 1-
dc.citation.startPage50-
dc.citation.endPage54-
dc.subject.keywordAuthordislocation free-
dc.subject.keywordAuthorGaAs:In-
dc.subject.keywordAuthorrapid thermal annealing-
dc.subject.keywordAuthordeep level-
dc.subject.keywordAuthorelectron trap-
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