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dc.contributor.author김용-
dc.contributor.author한철원-
dc.contributor.author김현수-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T01:10:32Z-
dc.date.available2024-01-22T01:10:32Z-
dc.date.created2022-01-10-
dc.date.issued1988-08-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147559-
dc.titleIn/Ga alloy source 를 이용하여 VPE 법으로 성장한 In// χ Ga//1//-// χ As( χ <a03)/GaAs 의 InAs 조성에 따른 밴드갭 및 전위밀도변화 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리, v.v. 28, pp.444 - ?-
dc.citation.title새물리-
dc.citation.volumev. 28-
dc.citation.startPage444-
dc.citation.endPage?-
dc.subject.keywordAuthorVPE-
dc.subject.keywordAuthorIn/Ga alloy source-
dc.subject.keywordAuthorband gap-
dc.subject.keywordAuthordislocation-
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