DSpace at KIST: 수소화에 의한 GaAs 내의 deep level 생성 .

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DC Field	Value	Language
dc.contributor.author	김은규	-
dc.contributor.author	조훈영	-
dc.contributor.author	민석기	-
dc.contributor.author	김재붕	-
dc.contributor.author	장진	-
dc.date.accessioned	2024-01-22T01:10:36Z	-
dc.date.available	2024-01-22T01:10:36Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1988-07	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147560	-
dc.title	수소화에 의한 GaAs 내의 deep level 생성 .	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	응용물리, v.v. 1, no.no. 2, pp.132 - 136	-
dc.citation.title	응용물리	-
dc.citation.volume	v. 1	-
dc.citation.number	no. 2	-
dc.citation.startPage	132	-
dc.citation.endPage	136	-
dc.subject.keywordAuthor	hydrogenation	-
dc.subject.keywordAuthor	GaAs	-
dc.subject.keywordAuthor	deep level	-

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