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dc.contributor.author김은규-
dc.contributor.author민석기-
dc.contributor.author조훈영-
dc.date.accessioned2024-01-22T01:11:41Z-
dc.date.available2024-01-22T01:11:41Z-
dc.date.created2022-01-10-
dc.date.issued1988-05-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147578-
dc.titleAbnormal behavior of midgap electron trap in HB-GaAs during thermal annealing.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJournal of applied physics, v.v. 63, no.no. 9, pp.4422 - 4425-
dc.citation.titleJournal of applied physics-
dc.citation.volumev. 63-
dc.citation.numberno. 9-
dc.citation.startPage4422-
dc.citation.endPage4425-
dc.subject.keywordAuthormidgap eletron trap-
dc.subject.keywordAuthorthermal annealing-
dc.subject.keywordAuthorHB-GaAs-
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