Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이정일 | - |
| dc.contributor.author | E. E. Crisman | - |
| dc.contributor.author | P. J. Stiles | - |
| dc.contributor.author | O. J. Gregory | - |
| dc.date.accessioned | 2024-01-22T01:35:05Z | - |
| dc.date.available | 2024-01-22T01:35:05Z | - |
| dc.date.created | 2022-01-10 | - |
| dc.date.issued | 1987-01 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/147746 | - |
| dc.title | Characterization of η -channel Ge MOSFETs with gate insulators formed by high pressure thermal oxidation. | - |
| dc.type | Article | - |
| dc.description.journalClass | 3 | - |
| dc.identifier.bibliographicCitation | Electronics letters, v.v. 23, no.no. 1, pp.8 - ? | - |
| dc.citation.title | Electronics letters | - |
| dc.citation.volume | v. 23 | - |
| dc.citation.number | no. 1 | - |
| dc.citation.startPage | 8 | - |
| dc.citation.endPage | ? | - |
| dc.subject.keywordAuthor | MOSFET | - |
| dc.subject.keywordAuthor | Ge | - |
| dc.subject.keywordAuthor | thermal oxide | - |
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