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dc.contributor.author오명환-
dc.contributor.authorE. D. Kim-
dc.contributor.authorC. H. Kim-
dc.date.accessioned2024-01-22T01:36:11Z-
dc.date.available2024-01-22T01:36:11Z-
dc.date.created2022-01-10-
dc.date.issued1987-01-
dc.identifier.issn0883-5551-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147764-
dc.description.abstractTo prove the discrepancy between the calculated barrier voltage and the measured barrier voltage resulting from the broad grain­size distribution, the microstructures and grain size distribution with relation to I­V characteristics of ZnO­Bi-
dc.languageEnglish-
dc.titleEffect of Grain­Size Distribution on the Barrier Voltage of ZnO Varistors-
dc.typeArticle-
dc.identifier.doi10.1111/j.1551-2916.1987.tb00159.x-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAdvanced Ceramic Materials, v.2, no.4, pp.841 - 847-
dc.citation.titleAdvanced Ceramic Materials-
dc.citation.volume2-
dc.citation.number4-
dc.citation.startPage841-
dc.citation.endPage847-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.scopusid2-s2.0-84985059598-
dc.subject.keywordAuthorZnO varistors-
dc.subject.keywordAuthorgrain boundary-
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