DSpace at KIST: Fabrication of 1um gate GaAs MESFET and analysis of correlation between dc characteristics and channel parameters.

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DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	엄경숙	-
dc.contributor.author	이유종	-
dc.date.accessioned	2024-01-22T01:37:16Z	-
dc.date.available	2024-01-22T01:37:16Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1987-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147782	-
dc.title	Fabrication of 1um gate GaAs MESFET and analysis of correlation between dc characteristics and channel parameters.	-
dc.title.alternative	1um 게이트 GaAs MESFET 의 제조 및 dc 특성과 채널 파라미터들 사이의 상호관계 분석 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	전자공학회논문지, v.v. 24, no.no. 5, pp.72 - ?	-
dc.citation.title	전자공학회논문지	-
dc.citation.volume	v. 24	-
dc.citation.number	no. 5	-
dc.citation.startPage	72	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	GaAs MESFET	-

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