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dc.contributor.author박영균-
dc.contributor.author최병두-
dc.date.accessioned2024-01-22T02:04:29Z-
dc.date.available2024-01-22T02:04:29Z-
dc.date.created2022-01-10-
dc.date.issued1984-09-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/148012-
dc.titlePhotoluminescence of Ge-doped Al//xGa//1//-//xAs grown by LPE.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation한국물리학회회보 = Bulletin of the Korean physical society, v.v. 2, no.no. 3, pp.171 - 171-
dc.citation.title한국물리학회회보 = Bulletin of the Korean physical society-
dc.citation.volumev. 2-
dc.citation.numberno. 3-
dc.citation.startPage171-
dc.citation.endPage171-
dc.subject.keywordAuthorphotoluminescence-
dc.subject.keywordAuthorAlGaAs-
dc.subject.keywordAuthorLPE-
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