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dc.contributor.author강광남-
dc.date.accessioned2024-01-22T02:06:50Z-
dc.date.available2024-01-22T02:06:50Z-
dc.date.created2022-01-10-
dc.date.issued1984-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/148050-
dc.titleVieillissement des transistors MOS submicroniques apres contrainte electrique revue.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationPhys. appl., v.v. 19, pp.933 - ?-
dc.citation.titlePhys. appl.-
dc.citation.volumev. 19-
dc.citation.startPage933-
dc.citation.endPage?-
dc.subject.keywordAuthortransistors MOS-
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