DSpace at KIST: The development of microstructure in Si//3N//4-bonded SiC refractory.

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DC Field	Value	Language
dc.contributor.author	최덕균	-
dc.contributor.author	이준근	-
dc.date.accessioned	2024-01-22T02:13:36Z	-
dc.date.available	2024-01-22T02:13:36Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1982-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/148158	-
dc.title	The development of microstructure in Si//3N//4-bonded SiC refractory.	-
dc.title.alternative	Si//3N//4 결합 SiC 내화재료에 있어서 생성된 Si//3N//4 의 미구조 변화 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	Journal of the Korean ceramic society = 한국요업학회지, v.v. 19, no.no. 2, pp.121 - 126	-
dc.citation.title	Journal of the Korean ceramic society = 한국요업학회지	-
dc.citation.volume	v. 19	-
dc.citation.number	no. 2	-
dc.citation.startPage	121	-
dc.citation.endPage	126	-
dc.subject.keywordAuthor	silicon carbide	-
dc.subject.keywordAuthor	high temperature properties	-
dc.subject.keywordAuthor	saggers	-
dc.subject.keywordAuthor	microstructure	-
dc.subject.keywordAuthor	silicon nitride	-

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