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dc.contributor.authorKim Yong Tae-
dc.contributor.authorS. K. Kwak-
dc.contributor.authorC. S. Kwon-
dc.contributor.authorD. J. Kim-
dc.contributor.authorC. W. Lee-
dc.contributor.authorI. H. Choi-
dc.contributor.authorMin Suk-Ki-
dc.date.accessioned2024-02-21T05:09:06Z-
dc.date.available2024-02-21T05:09:06Z-
dc.date.issued1995-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/148892-
dc.titleNew concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface.-
dc.title.alternativeNew concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface.-
dc.typeBook-
dc.citation.startPage?-
dc.citation.endPage?-
dc.relation.isPartOfSeries한국물리학회 제 71 회 학술논문발표회-
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